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AOD1N60 / AOU1N60 1.3A, 600V N-Channel MOSFET
formerly engineering part number AOD9600
General Description
The AOD1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
TO-252 D-PAK Top View Bottom View D TO-251 Top View
Features
VDS (V) = 600V ID = 1.3A RDS(ON) < 9 (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested!
Bottom View D
D
G
S
S
G G D
S
S
D
G
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current
C C
Maximium 600 30 1.3 0.8 4.0 1.0 15 30 5 45 0.36 -50 to 150 300
Units V V A A mJ mJ V/ns W W/ oC C C
TC=25C TC=100C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RJA RCS RJC Typical 45 2.3
Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25C B Power Dissipation Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-Sink Maximum Junction-to-Case D,F
A A,G
Maximum 55 0.5 2.8
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD1N60 / AOU1N60
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V ID=250A, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, ID=0.65A VDS=40V, ID=0.65A 3 4.1 7.5 0.9 0.65 1 1 4 105 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 12 1.5 2.9 130 14.5 1.8 3.5 6.1 VGS=10V, VDS=480V, ID=1A 1.3 3.1 10 VGS=10V, VDS=300V, ID=1A, RG=25 IF=1.3A,dI/dt=100A/s,VDS=100V 6.7 20 11.5 114 0.63 160 17.5 2.2 5.3 8 2 4 13 13 26 23 137 0.76 Min 600 0.6 1 10 100 5 9 Typ Max Units V
o V/ C
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature /TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance
A nA V S V A A pF pF pF nC nC nC ns ns ns ns ns C
Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=1.3A,dI/dt=100A/s,VDS=100V
A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C in a TO220 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. H. L=60mH, IAS=1A, VDD=150V, RG=10, Starting TJ=25C Rev0: May 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKE-50
to 175
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD1N60 / AOU1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2.0 10V 6.5V 1.5 6V ID (A) 1.0 ID(A) 1 25C 0.5 VGS=5.5V 125C 10 VDS=40V -55C
0.0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics 14 Normalized On-Resistance 13 12 RDS(ON) () 11 10 9 8 7 0 0.5 1 1.5 2 2.5 VGS=10V
0.1 2 4 6 8 10
VGS(Volts) Figure 2: Transfer Characteristics 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 VGS=10V ID=0.5A
-50
0
50
100
150
200
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
1.0E+01 1.0E+00 1.0E-01 1.0E-02
BVDSS (Normalized)
1.1 IS (A)
125C
1
-50 to 175
0.9 1.0E-03 1.0E-04 -50 0 50
o
25C
0.8 -100
100
150
200
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TJ ( C) Figure 5: Break Down vs. Junction Temperature
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD1N60 / AOU1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 VDS=480 ID=1A Capacitance (pF) 100 Coss 10 Crss 1000 Ciss
12
VGS (Volts)
9
6
3 1 0 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 2 8 0
0
10 VDS (Volts) Figure 8: Capacitance Characteristics
1
100
10.0
1000
10s RDS(ON) limited TJ(Max)=150C TC=25C 0.1s 10ms DC 1ms
100s
800
Power (W)
ID (Amps)
1.0
TJ(Max)=175C TA=25C
600 400 200 0 0.0001
0.1
0.0 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 100 1000
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F)
D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=2.8C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
-50 to 175
Single Pulse
PD Ton
T 10 100
0.01 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD1N60 / AOU1N60
50 40 Current rating ID(A) 0 25 50 75 100 125 150 30 20 10 0 TCASE (C) Figure 12: Power De-rating (Note B)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note B)
Power Dissipation (W)
400 TJ(Max)=175C TA=25C
300 Power (W)
200
100
0 0.0001
0.001
0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Case (Note G)
0.01
100
1000
10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=55C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01
PD
-50 to 175
0.1 1
Ton 10
T 100 1000
Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD1N60 / AOU1N60
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VD C
10V
DUT Vgs Ig
+
VDC
Vds
Qgs
Q gd
-
Charge
Res istive Switching Test Circuit & Waveforms
R L Vds Vds
Vgs Rg Vgs
DU T
+
VD C
90% Vdd 10% Vgs
t d(o n) tr t on
t d(off) t off tf
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DU T Vgs Vgs Vgs Vds EAR 1/2 LI =
2 AR
BVDSS
+
VDC
Vdd
-
Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs Qrr = - Idt
Vds Vgs Ig
Isd
L
Isd
IF
+
VD C
dI/dt IRM
trr
Vdd Vds
-
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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